展会新闻

2017/05/02

1378

欢迎参加6月28日先进功率半导体Ⅱ研讨会

 

先进功率半导体Ⅱ研讨会信息概览

三菱电机Gourab Majumdar主持

PCIM Asia诚邀您的参与


Schedule   

Wednesday Morning, 28June 2017

Location   
Meeting room 2 in the Floor B2 of Shanghai World Expo Exhibition and Convention Center
Chairperson
""

Gourab Majumdar

Gourab Majumdar""

""

Mitsubishi Electric Corporation, Japan

 

 

 

9:30

New Concept Package with 1st Generation Trench Gate SiC MOSFETs

""

Jun Li

Fuji Electric (China) Co., Ltd. China

 

Recently the main requirements in the market are further downsizing and higher efficiency of power conversion systems. For this reason, enhanced power density of the power modules will be the key to succeed. In this paper, electrical characteristics for all SiC modules with the 1st generation trench gate SiC MOSFETs and new concept package were presented. In addition, it was demonstrated that 1 rank extension for inverter capacity could be accomplished by applying all SiC modules against conventional Si modules.

 

9:55

A Novel High Thermal Performance Insulated Package Takes Power 

Integration to the Next Level 

""

Omar Harmon

Infineon Technologies AG, Austria

 

In this paper, we present a novel plug & play fully insulated TO247 with a Dual Die Pad configuration. This fully insulated device enables highest power density by reliable thermal path from chip to system heatsink. This brings power integration to the next level and fills the gap between single switch devices and power module solutions. We demonstrate in this paper PFC efficiency and device thermal measurements using a fully insulated IGBT and diode in dual die pad configuration comparing to a standard two discrete solution. In the final paper, we will also discuss possible topologies and applications that will address and benefit by this new package.

 

10:20

How to apply the better performance of SiC modules

""

Xiankui Ma

Mitsubishi Electric & Electronics (Shanghai) Co., Ltd.  , China

 

Comparing to Si devices, SiC devices has better performance on both conduction power loss and switching power losses. There are many types of SiC power devices, including discrete MOSFET, SiC MOSFET module and SiC IPMs. It will be helpful to select a proper power module for our application if we could have a good understanding on all these kinds of SiC modules. This paper will introduce these SiC modules and explain how to realize a better system design by applying using the better performance of SiC modules.

""10:45 Coffee Break

 

11:00

Comparison of 6.78MHz Amplifier Topologies for High Power, Highly 

Resonant Wireless Power Transfer 

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