展会新闻

2017/04/07

1242

欢迎参加宽禁带功率电子研讨会

Wide Bandgap
Power Electronics
宽禁带电子研讨会信息概览
同济大学吴志红教授主持
PCIM Asia诚邀您的参与

Schedule
Tuesday Morning, 27, June 2017
 
Location
Meeting room 2 in the Floor B2 of Shanghai World Expo Exhibition and convention Center
 
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Chairperson
Zhihong Wu
Tongji University, China
 
1.
10:00
High Efficiency Control Method for Non-Isolated Three-Port DC/DC Converter
 
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Yunchao Han
Friedrich Alexander University Erlangen Nurnberg, Germany
 
This paper presents non-isolated three port DC/DC converter which is optimized to connect a three-wire, bipolar ±380 VDC microgrid to different sources and loads like photovoltaics, batteries and fuel cells. A novel control method is used to reduce the switching losses and achieve and extremely high efficiency over a broad operating range. A 6kW prototype DC/DC converter is presented to verify the proposed control method. The prototype achieves a peak efficiency of 99.3%.
 
2.
10:25
Impact of SIC on Power Supplies and Drives to Save Energy and Materials
 
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Tatsuhiko Fujihira
Fuji Electric, Japan
 
Growing population and economy of this planet require us to build up a sustainable society. In electric power conversion, more energy and resource saving, efficient systems. In this speech, state of the art power devices and their applications are presented mainly on SIC devices. They increase the output power density, reduce the consumption of natural resources, and increase the efficiency of electric systems.

10:50   Coffee Break
 
3.
11:05
GaN Gate Injection Transistor for Reliable Power Supply Solution
 
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Howard Sin
Panasonic Industrial Devices Semiconductor Asia, Singapore
 
The normally off GaN GIT with breakdown voltage of over 600V and current collapse free up to 850V has been applied to various power supply applications. GaN GIT’s performance is unparalleled and far more superior that existing Si-devices, thus realizing higher efficiency and higher density solutions.
With growing confidence in GaN GIT, this presentation will discuss the robustness of this device demonstrated through different reliability testing methods, Examples of actual application implementation and devices enabling innovation will be described. This presentation will also review recent advancements in GaN GIT technology which exhibit very promising potential for future power switching systems.
 
4.
11:30
Recent progress in SIC power devices for power electronics applications
 
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Hiroshi Watanabe
Mitsubishi Electric Corporation, Japan
 
The SIC power devices with the rated voltage of 600V to 3300V have been applied to industrial systems, traction systems and home electric appliances to improve the energy efficiencies of these systems. This presentation introduce the performance and reliability of these SIC power devices, and report on recent progress in SIC power devices which enable higher power density.

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